BUJ103AX Todos los transistores

 

BUJ103AX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUJ103AX

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 26 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 12.5

Encapsulados: TO220F

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BUJ103AX datasheet

 ..1. Size:87K  philips
buj103ax.pdf pdf_icon

BUJ103AX

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting balla

 ..2. Size:288K  cn ween semi
buj103ax.pdf pdf_icon

BUJ103AX

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast a

 7.1. Size:76K  philips
buj103a.pdf pdf_icon

BUJ103AX

BUJ103A Silicon diffused power transistor Rev. 03 3 March 2005 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control

 7.2. Size:65K  philips
buj103au.pdf pdf_icon

BUJ103AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAM

Otros transistores... BFU725F , BFU730F , BFU760F , BFU790F , BUJ100 , BUJ100LR , BUJ103A , BUJ103AD , 2SC1815 , BUJ105A , BUJ105AB , BUJ105AD , BUJ106A , BUJ302A , BUJ302AD , BUJ302AX , BUJ303A .

 

 

 


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