BUJ103AX
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUJ103AX
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 26
W
Tensión colector-base (Vcb): 700
V
Tensión colector-emisor (Vce): 700
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 12.5
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar BUJ103AX
BUJ103AX
Datasheet (PDF)
..1. Size:87K philips
buj103ax.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBUJ103AXSilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting balla
..2. Size:288K cn ween semi
buj103ax.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ103AXSilicon Diffused Power TransistorProduct specification August 2018WeEn Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast a
7.1. Size:76K philips
buj103a.pdf
BUJ103ASilicon diffused power transistorRev. 03 3 March 2005 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control
7.2. Size:65K philips
buj103au.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAM
7.3. Size:79K philips
buj103ad.pdf
BUJ103ADSilicon diffused power transistorRev. 01 14 December 2004 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428(D-PAK) surface mounted package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Mot
7.4. Size:84K philips
buj103a hg 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ103ASilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast application
7.5. Size:497K cn ween semi
buj103a.pdf
BUJ103ASilicon diffused power transistorRev.05 - 29 March 2018 Product data sheet1. General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Low thermal resistance Fast switching3. Applications Inverters Motor control systems Electronic lighting ballasts
7.6. Size:824K cn ween semi
buj103ad.pdf
BUJ103ADSilicon diffused power transistorRev. 3 18 October 2016 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package.1.2 Features and benefits Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC
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