BUJ103AX Datasheet. Specs and Replacement

Type Designator: BUJ103AX  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 26 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 12.5

Noise Figure, dB: -

Package: TO220F

 BUJ103AX Substitution

- BJT ⓘ Cross-Reference Search

 

BUJ103AX datasheet

 ..1. Size:87K  philips

buj103ax.pdf pdf_icon

BUJ103AX

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting balla... See More ⇒

 ..2. Size:288K  cn ween semi

buj103ax.pdf pdf_icon

BUJ103AX

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast a... See More ⇒

 7.1. Size:76K  philips

buj103a.pdf pdf_icon

BUJ103AX

BUJ103A Silicon diffused power transistor Rev. 03 3 March 2005 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control ... See More ⇒

 7.2. Size:65K  philips

buj103au.pdf pdf_icon

BUJ103AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAM... See More ⇒

Detailed specifications: BFU725F, BFU730F, BFU760F, BFU790F, BUJ100, BUJ100LR, BUJ103A, BUJ103AD, 2SC1815, BUJ105A, BUJ105AB, BUJ105AD, BUJ106A, BUJ302A, BUJ302AD, BUJ302AX, BUJ303A

Keywords - BUJ103AX pdf specs

 BUJ103AX cross reference

 BUJ103AX equivalent finder

 BUJ103AX pdf lookup

 BUJ103AX substitution

 BUJ103AX replacement