BUJ103AX datasheet, аналоги, основные параметры

Наименование производителя: BUJ103AX  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 26 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 12.5

Корпус транзистора: TO220F

 Аналоги (замена) для BUJ103AX

- подборⓘ биполярного транзистора по параметрам

 

BUJ103AX даташит

 ..1. Size:87K  philips
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BUJ103AX

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting balla

 ..2. Size:288K  cn ween semi
buj103ax.pdfpdf_icon

BUJ103AX

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast a

 7.1. Size:76K  philips
buj103a.pdfpdf_icon

BUJ103AX

BUJ103A Silicon diffused power transistor Rev. 03 3 March 2005 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control

 7.2. Size:65K  philips
buj103au.pdfpdf_icon

BUJ103AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAM

Другие транзисторы: BFU725F, BFU730F, BFU760F, BFU790F, BUJ100, BUJ100LR, BUJ103A, BUJ103AD, 2SC1815, BUJ105A, BUJ105AB, BUJ105AD, BUJ106A, BUJ302A, BUJ302AD, BUJ302AX, BUJ303A