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MX0912B351Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MX0912B351Y
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 960 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 21 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1250 MHz
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: SOT439A
 

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MX0912B351Y Datasheet (PDF)

 ..1. Size:76K  philips
 mx0912b351y 2.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B351YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B351YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.1. Size:77K  philips
 mx0912b251y 2.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B251YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B251YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.2. Size:81K  philips
 mx0912b100y mz0912b100y.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

 7.3. Size:78K  philips
 mx0912b100y.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

MOSTRAR MÁS

Otros transistores... BUJ403A , BUJD103AD , BUJD105AD , BUJD203A , BUJD203AD , BUJD203AX , BUT11APX-1200 , MX0912B251Y , 2SD313 , MZ0912B100Y , MZ0912B50Y , 3CA649 , 3CA649A , 3CA683 , 3CA684 , 3CA688 , 3CA750 .

History: CD9015D | BSX50-6 | 40469 | KTC3198L | DRA4124E | 2SCR542D | BCP669A

 

 
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