MX0912B351Y Todos los transistores

 

MX0912B351Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MX0912B351Y
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 960 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 21 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1250 MHz
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: SOT439A
 

 Búsqueda de reemplazo de MX0912B351Y

   - Selección ⓘ de transistores por parámetros

 

MX0912B351Y Datasheet (PDF)

 ..1. Size:76K  philips
 mx0912b351y 2.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B351YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B351YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.1. Size:77K  philips
 mx0912b251y 2.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B251YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B251YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.2. Size:81K  philips
 mx0912b100y mz0912b100y.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

 7.3. Size:78K  philips
 mx0912b100y.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N6527 | 2SD401R | BD233-6 | MMBT3904WGH | SDT9207 | BDX50-7 | KTC3202

 

 
Back to Top

 


 
.