All Transistors. MX0912B351Y Datasheet

 

MX0912B351Y Datasheet and Replacement


   Type Designator: MX0912B351Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 960 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 21 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: SOT439A
 

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MX0912B351Y Datasheet (PDF)

 ..1. Size:76K  philips
mx0912b351y 2.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B351YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B351YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.1. Size:77K  philips
mx0912b251y 2.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B251YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B251YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.2. Size:81K  philips
mx0912b100y mz0912b100y.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

 7.3. Size:78K  philips
mx0912b100y.pdf pdf_icon

MX0912B351Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

Datasheet: BUJ403A , BUJD103AD , BUJD105AD , BUJD203A , BUJD203AD , BUJD203AX , BUT11APX-1200 , MX0912B251Y , 2SD313 , MZ0912B100Y , MZ0912B50Y , 3CA649 , 3CA649A , 3CA683 , 3CA684 , 3CA688 , 3CA750 .

History: MJH16010A | BC144 | 2SC3812 | MJL21195 | SUR496H | TIP620 | BC368-10

Keywords - MX0912B351Y transistor datasheet

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