PBHV8115T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBHV8115T

Código: W6-_W6p_W6t_W6W

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 5.7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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PBHV8115T datasheet

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 pbhv8115t.pdf pdf_icon

PBHV8115T

PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 4 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9115T. 1.2 Features High voltage Low collector-emitter satu

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PBHV8115T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:126K  philips
 pbhv8115z.pdf pdf_icon

PBHV8115T

PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9115Z. 1.2 Features High voltage Low collector-emitter

 6.2. Size:242K  nxp
 pbhv8115x.pdf pdf_icon

PBHV8115T

PBHV8115X 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 9 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9115X. 2. Features and benefits High voltage Low collector-emitter s

MOSTRAR MÁS

Otros transistores... 3CA772M, 3CA772S, 3CA772T, 3CA80A, 3CA80B, 3CA80C, 3CA80D, 3CA80E, 2N2907, PBHV8115Z, PBHV8140Z, PBHV8215Z, PBHV8540T, PBHV8540Z, PBHV9040T, PBHV9040Z, PBHV9050T