PBHV8115T Specs and Replacement

Type Designator: PBHV8115T

SMD Transistor Code: W6-_W6p_W6t_W6W

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 5.7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

 PBHV8115T Substitution

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PBHV8115T datasheet

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PBHV8115T

PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 4 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9115T. 1.2 Features High voltage Low collector-emitter satu... See More ⇒

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PBHV8115T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

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PBHV8115T

PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9115Z. 1.2 Features High voltage Low collector-emitter... See More ⇒

 6.2. Size:242K  nxp

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PBHV8115T

PBHV8115X 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 9 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9115X. 2. Features and benefits High voltage Low collector-emitter s... See More ⇒

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Detailed specifications: 3CA772M, 3CA772S, 3CA772T, 3CA80A, 3CA80B, 3CA80C, 3CA80D, 3CA80E, 2N2907, PBHV8115Z, PBHV8140Z, PBHV8215Z, PBHV8540T, PBHV8540Z, PBHV9040T, PBHV9040Z, PBHV9050T

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