PBHV8140Z Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBHV8140Z

Código: V8140Z

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.45 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 25 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT223

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PBHV8140Z datasheet

 ..1. Size:152K  philips
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PBHV8140Z

PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9540Z. 1.2 Features High voltage Low collector-emitt

 ..2. Size:269K  nxp
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PBHV8140Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:164K  philips
pbhv8118t.pdf pdf_icon

PBHV8140Z

PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEs

 8.2. Size:126K  philips
pbhv8115z.pdf pdf_icon

PBHV8140Z

PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9115Z. 1.2 Features High voltage Low collector-emitter

Otros transistores... 3CA772T, 3CA80A, 3CA80B, 3CA80C, 3CA80D, 3CA80E, PBHV8115T, PBHV8115Z, 2SC828, PBHV8215Z, PBHV8540T, PBHV8540Z, PBHV9040T, PBHV9040Z, PBHV9050T, PBHV9115T, PBHV9115Z