All Transistors. PBHV8140Z Datasheet

 

PBHV8140Z Datasheet and Replacement


   Type Designator: PBHV8140Z
   SMD Transistor Code: V8140Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.45 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT223
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PBHV8140Z Datasheet (PDF)

 ..1. Size:152K  philips
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PBHV8140Z

PBHV8140Z500 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9540Z.1.2 Features High voltage Low collector-emitt

 ..2. Size:269K  nxp
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PBHV8140Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:164K  philips
pbhv8118t.pdf pdf_icon

PBHV8140Z

PBHV8118T180 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEs

 8.2. Size:126K  philips
pbhv8115z.pdf pdf_icon

PBHV8140Z

PBHV8115Z150 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 9 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115Z.1.2 Features High voltage Low collector-emitter

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N6554 | 2T6551 | RCA6340 | AD541 | STC4350Q

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