PBHV9040T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBHV9040T
Código: W5*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.25 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 55 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de PBHV9040T
PBHV9040T Datasheet (PDF)
pbhv9040t.pdf

PBHV9040T500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 15 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540T.1.2 Features High voltage Low collector-emitter s
pbhv9040t.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv9040z.pdf

PBHV9040Z500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 15 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540Z.1.2 Features High voltage Low collector-emit
pbhv9040x.pdf

PBHV9040X500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor9 December 2013 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540X.2. Features and benefits High voltage Low collector-emitte
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