PBHV9040T Specs and Replacement

Type Designator: PBHV9040T

SMD Transistor Code: W5*

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 55 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

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PBHV9040T datasheet

 ..1. Size:118K  philips

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PBHV9040T

PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540T. 1.2 Features High voltage Low collector-emitter s... See More ⇒

 ..2. Size:234K  nxp

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PBHV9040T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.1. Size:130K  philips

 pbhv9040z.pdf pdf_icon

PBHV9040T

PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540Z. 1.2 Features High voltage Low collector-emit... See More ⇒

 6.2. Size:244K  nxp

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PBHV9040T

PBHV9040X 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 9 December 2013 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540X. 2. Features and benefits High voltage Low collector-emitte... See More ⇒

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Detailed specifications: 3CA80D, 3CA80E, PBHV8115T, PBHV8115Z, PBHV8140Z, PBHV8215Z, PBHV8540T, PBHV8540Z, MJE350, PBHV9040Z, PBHV9050T, PBHV9115T, PBHV9115Z, PBHV9215Z, PBHV9540Z, PBLS1501V, PBLS1501Y

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