PBHV9215Z Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBHV9215Z

Código: V9215Z

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.45 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 35 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT223

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PBHV9215Z datasheet

 ..1. Size:151K  philips
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PBHV9215Z

PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8215Z. 1.2 Features High voltage Low collector-emitt

 ..2. Size:268K  nxp
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PBHV9215Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:333K  philips
pbhv9050z.pdf pdf_icon

PBHV9215Z

PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 1 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation v

 9.2. Size:90K  philips
pbhv9050t.pdf pdf_icon

PBHV9215Z

PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 01 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PMBTA45. 1.2 Features High voltage Low collector-emitter s

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