All Transistors. PBHV9215Z Datasheet

 

PBHV9215Z Datasheet and Replacement


   Type Designator: PBHV9215Z
   SMD Transistor Code: V9215Z
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.45 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 35 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT223
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PBHV9215Z Datasheet (PDF)

 ..1. Size:151K  philips
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PBHV9215Z

PBHV9215Z150 V, 2 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 11 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8215Z.1.2 Features High voltage Low collector-emitt

 ..2. Size:268K  nxp
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PBHV9215Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:333K  philips
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PBHV9215Z

PBHV9050Z500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistorRev. 1 19 August 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation v

 9.2. Size:90K  philips
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PBHV9215Z

PBHV9050T500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistorRev. 01 16 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PMBTA45.1.2 Features High voltage Low collector-emitter s

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NTE43 | SPS4014A | CPS2515B | 2SD1532

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