PBRP123YT Todos los transistores

 

PBRP123YT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBRP123YT
   Código: *7Q_-7Q_p7Q_t7Q_W7Q
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 11 pF
   Ganancia de corriente contínua (hfe): 190
   Paquete / Cubierta: SOT23
 

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PBRP123YT Datasheet (PDF)

 ..1. Size:114K  philips
 pbrp123yt.pdf pdf_icon

PBRP123YT

PBRP123YTPNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 10 kRev. 01 17 December 2007 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN123YT.1.2 Features 800 mA repetitive peak

 7.1. Size:112K  philips
 pbrp123et.pdf pdf_icon

PBRP123YT

PBRP123ETPNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 2.2 kRev. 01 16 January 2008 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN123ET.1.2 Features 800 mA repetitive peak

 9.1. Size:115K  philips
 pbrp113zt.pdf pdf_icon

PBRP123YT

PBRP113ZTPNP 800 mA, 40 V BISS RET; R1 = 1 k, R2 = 10 kRev. 01 16 January 2008 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN113ZT.1.2 Features 800 mA repetitive peak out

 9.2. Size:104K  nxp
 pbrp113e.pdf pdf_icon

PBRP123YT

PBRP113ETPNP 800 mA, 40 V BISS RET; R1 = 1 k, R2 = 1 kRev. 01 17 December 2007 Product data sheet1. Product profile1.1 General description800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-EquippedTransistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PBRN113ET.1.2 Features 800 mA repetitive peak out

MOSTRAR MÁS

Otros transistores... PBR951 , PBRN113ET , PBRN113ZT , PBRN123ET , PBRN123YT , PBRP113ET , PBRP113ZT , PBRP123ET , 2SD2499 , PBSS2515E , PBSS2515M , PBSS2515VPN , PBSS2515VS , PBSS2515YPN , PBSS2540E , PBSS2540M , PBSS301ND .

History: 2SB1201S | BD376-16 | 37741

 

 
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