PBRP123YT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBRP123YT  📄📄 

Código: *7Q_-7Q_p7Q_t7Q_W7Q

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 11 pF

Ganancia de corriente contínua (hFE): 190

Encapsulados: SOT23

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PBRP123YT datasheet

 ..1. Size:114K  philips
 pbrp123yt.pdf pdf_icon

PBRP123YT

PBRP123YT PNP 800 mA, 40 V BISS RET; R1 = 2.2 k , R2 = 10 k Rev. 01 17 December 2007 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement PBRN123YT. 1.2 Features 800 mA repetitive peak

 7.1. Size:112K  philips
 pbrp123et.pdf pdf_icon

PBRP123YT

PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 k , R2 = 2.2 k Rev. 01 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement PBRN123ET. 1.2 Features 800 mA repetitive peak

 9.1. Size:115K  philips
 pbrp113zt.pdf pdf_icon

PBRP123YT

PBRP113ZT PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k Rev. 01 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement PBRN113ZT. 1.2 Features 800 mA repetitive peak out

 9.2. Size:104K  nxp
 pbrp113e.pdf pdf_icon

PBRP123YT

PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 1 k Rev. 01 17 December 2007 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement PBRN113ET. 1.2 Features 800 mA repetitive peak out

MOSTRAR MÁS

Otros transistores... PBR951, PBRN113ET, PBRN113ZT, PBRN123ET, PBRN123YT, PBRP113ET, PBRP113ZT, PBRP123ET, TIP31, PBSS2515E, PBSS2515M, PBSS2515VPN, PBSS2515VS, PBSS2515YPN, PBSS2540E, PBSS2540M, PBSS301ND