PBSS2515M Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS2515M

Código: S2

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.43 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 4.4 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT883

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PBSS2515M datasheet

 ..1. Size:83K  nxp
pbss2515m.pdf pdf_icon

PBSS2515M

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2515M 15 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 15 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS2515M NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT

 0.1. Size:1143K  nxp
pbss2515mb.pdf pdf_icon

PBSS2515M

PBSS2515MB 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3515MB. 1.2 Features and benefits Leadless ultra small SMD plastic High

 6.1. Size:65K  philips
pbss2515f 1.pdf pdf_icon

PBSS2515M

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (automotive, telecom and audio video) such as

 6.2. Size:142K  philips
pbss2515vs.pdf pdf_icon

PBSS2515M

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCE(sat) NPN double transistor Product data sheet 2004 Dec 23 Supersedes data of 2001 Nov 07 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN double transistor PBSS2515VS FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultra thin pac

Otros transistores... PBRN113ZT, PBRN123ET, PBRN123YT, PBRP113ET, PBRP113ZT, PBRP123ET, PBRP123YT, PBSS2515E, 2SD313, PBSS2515VPN, PBSS2515VS, PBSS2515YPN, PBSS2540E, PBSS2540M, PBSS301ND, PBSS301NX, PBSS301NZ