PBSS2515M Datasheet. Specs and Replacement
Type Designator: PBSS2515M 📄📄
SMD Transistor Code: S2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.43 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4.4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT883
📄📄 Copy
PBSS2515M Substitution
- BJT ⓘ Cross-Reference Search
PBSS2515M datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2515M 15 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 15 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS2515M NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT ... See More ⇒
PBSS2515MB 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3515MB. 1.2 Features and benefits Leadless ultra small SMD plastic High... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (automotive, telecom and audio video) such as ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCE(sat) NPN double transistor Product data sheet 2004 Dec 23 Supersedes data of 2001 Nov 07 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN double transistor PBSS2515VS FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultra thin pac... See More ⇒
Detailed specifications: PBRN113ZT, PBRN123ET, PBRN123YT, PBRP113ET, PBRP113ZT, PBRP123ET, PBRP123YT, PBSS2515E, 2SD313, PBSS2515VPN, PBSS2515VS, PBSS2515YPN, PBSS2540E, PBSS2540M, PBSS301ND, PBSS301NX, PBSS301NZ
Keywords - PBSS2515M pdf specs
PBSS2515M cross reference
PBSS2515M equivalent finder
PBSS2515M pdf lookup
PBSS2515M substitution
PBSS2515M replacement








