PBSS2540E Todos los transistores

 

PBSS2540E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS2540E
   Código: 1S
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT416 SC75
     - Selección de transistores por parámetros

 

PBSS2540E Datasheet (PDF)

 ..1. Size:152K  nxp
pbss2540e.pdf pdf_icon

PBSS2540E

PBSS2540E40 V, 500 mA NPN low VCEsat (BISS) transistorRev. 02 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.PNP complement: PBS3540E.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM

 6.1. Size:604K  nxp
pbss2540mb.pdf pdf_icon

PBSS2540E

PBSS2540MB40 V, 0.5 A NPN low VCEsat (BISS) transistorRev. 1 4 April 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB.1.2 Features and benefits Leadless ultra small SMD plasti

 6.2. Size:81K  nxp
pbss2540m.pdf pdf_icon

PBSS2540E

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS2540M40 V, 0.5 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Jul 22NXP Semiconductors Product data sheet40 V, 0.5 A PBSS2540MNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

 8.1. Size:65K  philips
pbss2515f 1.pdf pdf_icon

PBSS2540E

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS2515FNPN transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationNPN transistor PBSS2515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (automotive,telecom and audio video) such as

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SC487 | 2SC4959 | P609 | CSC2003 | 2SD668B | CSC2690R | 2SD668AB

 

 
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