PBSS2540E Datasheet. Specs and Replacement
Type Designator: PBSS2540E 📄📄
SMD Transistor Code: 1S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT416
SC75
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PBSS2540E datasheet
..1. Size:152K nxp
pbss2540e.pdf 

PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev. 02 15 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement PBS3540E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM ... See More ⇒
6.1. Size:604K nxp
pbss2540mb.pdf 

PBSS2540MB 40 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3540MB. 1.2 Features and benefits Leadless ultra small SMD plasti... See More ⇒
6.2. Size:81K nxp
pbss2540m.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 40 V, 0.5 A PBSS2540M NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili... See More ⇒
8.1. Size:65K philips
pbss2515f 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (automotive, telecom and audio video) such as ... See More ⇒
8.2. Size:142K philips
pbss2515vs.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCE(sat) NPN double transistor Product data sheet 2004 Dec 23 Supersedes data of 2001 Nov 07 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN double transistor PBSS2515VS FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultra thin pac... See More ⇒
8.3. Size:120K philips
pbss2515e.pdf 

PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 02 21 April 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3515E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collecto... See More ⇒
8.4. Size:99K nxp
pbss2515ypn.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PBSS2515YPN 15 V low VCE(sat) NPN/PNP transistor Product data sheet 2005 Jan 11 Supersedes data of 2002 May 08 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515YPN FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current cap... See More ⇒
8.5. Size:83K nxp
pbss2515m.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2515M 15 V, 0.5 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 15 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS2515M NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT ... See More ⇒
8.6. Size:1143K nxp
pbss2515mb.pdf 

PBSS2515MB 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3515MB. 1.2 Features and benefits Leadless ultra small SMD plastic High... See More ⇒
8.7. Size:348K nxp
pbss2515vs.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
8.8. Size:84K nxp
pbss2515vpn.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCEsat NPN/PNP transistor Product specification 2001 Nov 07 Supersedes data of 2001 Aug 31 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515VPN FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin packa... See More ⇒
Detailed specifications: PBRP113ZT, PBRP123ET, PBRP123YT, PBSS2515E, PBSS2515M, PBSS2515VPN, PBSS2515VS, PBSS2515YPN, 8550, PBSS2540M, PBSS301ND, PBSS301NX, PBSS301NZ, PBSS301PD, PBSS301PX, PBSS301PZ, PBSS302ND
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