PBSS301ND Todos los transistores

 

PBSS301ND . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS301ND
   Código: C6
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.5 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT457 SC74
     - Selección de transistores por parámetros

 

PBSS301ND Datasheet (PDF)

 ..1. Size:128K  philips
pbss301nd.pdf pdf_icon

PBSS301ND

PBSS301ND20 V, 4 A NPN low VCEsat (BISS) transistorRev. 03 7 September 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PD.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

 ..2. Size:245K  nxp
pbss301nd.pdf pdf_icon

PBSS301ND

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:177K  nxp
pbss301nx.pdf pdf_icon

PBSS301ND

PBSS301NX12 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PX.1.2 Features Low collector-emitter saturation voltage VCEsa

 6.2. Size:149K  nxp
pbss301nz.pdf pdf_icon

PBSS301ND

PBSS301NZ12 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DDTC143XCA | DDTC143FKA | 2SC4958 | PBLS4001V | DMA364A1 | 2DB1424R | CSB564AG

 

 
Back to Top

 


 
.