PBSS301ND Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS301ND 📄📄
Código: C6
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.5 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 60 pF
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PBSS301ND datasheet
pbss301nd.pdf
PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 03 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PD. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit
pbss301nd.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss301nx.pdf
PBSS301NX 12 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PX. 1.2 Features Low collector-emitter saturation voltage VCEsa
pbss301nz.pdf
PBSS301NZ 12 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
Otros transistores... PBRP123YT, PBSS2515E, PBSS2515M, PBSS2515VPN, PBSS2515VS, PBSS2515YPN, PBSS2540E, PBSS2540M, TIP42, PBSS301NX, PBSS301NZ, PBSS301PD, PBSS301PX, PBSS301PZ, PBSS302ND, PBSS302NX, PBSS302NZ
Parámetros del transistor bipolar y su interrelación.
History: 3N114
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