PBSS302NX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS302NX

Código: *5C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.1 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 95 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT89

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PBSS302NX datasheet

 ..1. Size:188K  philips
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PBSS302NX

PBSS302NX 20 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

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PBSS302NX

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:136K  philips
 pbss302nd.pdf pdf_icon

PBSS302NX

PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 18 February 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PD. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

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 pbss302nz.pdf pdf_icon

PBSS302NX

PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

MOSTRAR MÁS

Otros transistores... PBSS2540M, PBSS301ND, PBSS301NX, PBSS301NZ, PBSS301PD, PBSS301PX, PBSS301PZ, PBSS302ND, D880, PBSS302NZ, PBSS302PD, PBSS302PX, PBSS302PZ, PBSS303ND, PBSS303NX, PBSS303NZ, PBSS303PD