All Transistors. PBSS302NX Datasheet

 

PBSS302NX Datasheet, Equivalent, Cross Reference Search


   Type Designator: PBSS302NX
   SMD Transistor Code: *5C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 95 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT89

 PBSS302NX Transistor Equivalent Substitute - Cross-Reference Search

   

PBSS302NX Datasheet (PDF)

 ..1. Size:188K  philips
pbss302nx.pdf

PBSS302NX
PBSS302NX

PBSS302NX20 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PX.1.2 Features Low collector-emitter saturation voltage VCEsa

 ..2. Size:305K  nxp
pbss302nx.pdf

PBSS302NX
PBSS302NX

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:136K  philips
pbss302nd.pdf

PBSS302NX
PBSS302NX

PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

 6.2. Size:164K  philips
pbss302nz.pdf

PBSS302NX
PBSS302NX

PBSS302NZ20 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 6.3. Size:126K  nxp
pbss302nd.pdf

PBSS302NX
PBSS302NX

PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

 6.4. Size:281K  nxp
pbss302nz.pdf

PBSS302NX
PBSS302NX

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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