PBSS302PD Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS302PD
Código: C9
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.5 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 110 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hFE): 200
Búsqueda de reemplazo de PBSS302PD
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PBSS302PD datasheet
pbss302pd.pdf
PBSS302PD 40 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 6 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302ND. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous
pbss302pd.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss302px.pdf
PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NX. 1.2 Features Low collector-emitter saturation voltage VCEsa
pbss302pz.pdf
PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
Otros transistores... PBSS301NX, PBSS301NZ, PBSS301PD, PBSS301PX, PBSS301PZ, PBSS302ND, PBSS302NX, PBSS302NZ, D209L, PBSS302PX, PBSS302PZ, PBSS303ND, PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX, PBSS303PZ
History: RT3NGGM
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