PBSS302PD Datasheet. Specs and Replacement
Type Designator: PBSS302PD 📄📄
SMD Transistor Code: C9
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 110 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 200
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PBSS302PD datasheet
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NX. 1.2 Features Low collector-emitter saturation voltage VCEsa... See More ⇒
PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c... See More ⇒
Detailed specifications: PBSS301NX, PBSS301NZ, PBSS301PD, PBSS301PX, PBSS301PZ, PBSS302ND, PBSS302NX, PBSS302NZ, D209L, PBSS302PX, PBSS302PZ, PBSS303ND, PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX, PBSS303PZ
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