PBSS303ND Todos los transistores

 

PBSS303ND . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS303ND
   Código: AE
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.5 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 33 pF
   Ganancia de corriente contínua (hfe): 345
   Paquete / Cubierta: SOT457 SC74
 

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PBSS303ND Datasheet (PDF)

 ..1. Size:175K  nxp
 pbss303nd.pdf pdf_icon

PBSS303ND

PBSS303ND60 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 14 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 6.1. Size:126K  nxp
 pbss303nx.pdf pdf_icon

PBSS303ND

PBSS303NX30 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 01 23 August 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PX.1.2 Features Low collector-emitter saturation voltage VCEsat

 6.2. Size:152K  nxp
 pbss303nz.pdf pdf_icon

PBSS303ND

PBSS303NZ30 V, 5.5 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 7.1. Size:191K  nxp
 pbss303pd.pdf pdf_icon

PBSS303ND

PBSS303PD60 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur

MOSTRAR MÁS

Otros transistores... PBSS301PX , PBSS301PZ , PBSS302ND , PBSS302NX , PBSS302NZ , PBSS302PD , PBSS302PX , PBSS302PZ , 2SC2383Y , PBSS303NX , PBSS303NZ , PBSS303PD , PBSS303PX , PBSS303PZ , PBSS304ND , PBSS304NX , PBSS304NZ .

History: MP2527 | 2SC227 | BUX63 | 2SD1321 | BCM856S | FTC3265 | LDTC143XET1G

 

 
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