PBSS305NX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS305NX

Código: *5F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.1 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 110 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT89

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PBSS305NX datasheet

 ..1. Size:210K  philips
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PBSS305NX

PBSS305NX 80 V, 4.6 A NPN low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PX. 1.2 Features Low collector-emitter saturation voltage VCEsat

 ..2. Size:327K  nxp
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PBSS305NX

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:186K  nxp
pbss305nz.pdf pdf_icon

PBSS305NX

PBSS305NZ 80 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 6.2. Size:156K  nxp
pbss305nd.pdf pdf_icon

PBSS305NX

PBSS305ND 100 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 7 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

Otros transistores... PBSS303PZ, PBSS304ND, PBSS304NX, PBSS304NZ, PBSS304PD, PBSS304PX, PBSS304PZ, PBSS305ND, TIP142, PBSS305NZ, PBSS305PD, PBSS305PX, PBSS305PZ, PBSS306NX, PBSS306NZ, PBSS306PX, PBSS306PZ