PBSS305NX Datasheet. Specs and Replacement

Type Designator: PBSS305NX  📄📄 

SMD Transistor Code: *5F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 110 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SOT89

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PBSS305NX datasheet

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PBSS305NX

PBSS305NX 80 V, 4.6 A NPN low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PX. 1.2 Features Low collector-emitter saturation voltage VCEsat... See More ⇒

 ..2. Size:327K  nxp

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PBSS305NX

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

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PBSS305NX

PBSS305NZ 80 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu... See More ⇒

 6.2. Size:156K  nxp

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PBSS305NX

PBSS305ND 100 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 7 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr... See More ⇒

Detailed specifications: PBSS303PZ, PBSS304ND, PBSS304NX, PBSS304NZ, PBSS304PD, PBSS304PX, PBSS304PZ, PBSS305ND, TIP142, PBSS305NZ, PBSS305PD, PBSS305PX, PBSS305PZ, PBSS306NX, PBSS306NZ, PBSS306PX, PBSS306PZ

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