All Transistors. PBSS305NX Datasheet

 

PBSS305NX Datasheet and Replacement


   Type Designator: PBSS305NX
   SMD Transistor Code: *5F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.1 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT89
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PBSS305NX Datasheet (PDF)

 ..1. Size:210K  philips
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PBSS305NX

PBSS305NX80 V, 4.6 A NPN low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PX.1.2 Features Low collector-emitter saturation voltage VCEsat

 ..2. Size:327K  nxp
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PBSS305NX

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:186K  nxp
pbss305nz.pdf pdf_icon

PBSS305NX

PBSS305NZ80 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 6.2. Size:156K  nxp
pbss305nd.pdf pdf_icon

PBSS305NX

PBSS305ND100 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 7 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KT801B | BSX81A | ZTX3709K | RT1P430U | 2N6014 | 3CG1036K | BUF410FI

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