PBSS306NX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS306NX
Código: *5G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.1 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 110 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar PBSS306NX
PBSS306NX Datasheet (PDF)
pbss306nx.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss306nx.pdf
SMD Type TransistorsNPN TransistorsPBSS306NX (KBSS306NX)1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC0.42 0.10.46 0.1 High efficiency due to less heat generation Complement to PBSS306PX.1.BaseC2.Collector3.EmitterBE Absolute
pbss306nz.pdf
PBSS306NZ100 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS306PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector
pbss306px.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss306pz.pdf
PBSS306PZ100 V, 4.1 A PNP low VCEsat (BISS) transistorRev. 01 20 September 2006 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS306NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector
pbss306px.pdf
SMD Type TransistorsPNP TransistorsPBSS306PX (KBSS306PX)1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC0.42 0.10.46 0.1 High efficiency due to less heat generation Complement to PBSS306NX.1.Base2.CollectorC3.EmitterBE Absolute
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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