Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SMD Type TransistorsNPN TransistorsPBSS306NX (KBSS306NX)1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC0.42 0.10.46 0.1 High efficiency due to less heat generation Complement to PBSS306PX.1.BaseC2.Collector3.EmitterBE Absolute

PBSS306NZ100 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS306PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS306PZ100 V, 4.1 A PNP low VCEsat (BISS) transistorRev. 01 20 September 2006 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS306NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector

SMD Type TransistorsPNP TransistorsPBSS306PX (KBSS306PX)1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC0.42 0.10.46 0.1 High efficiency due to less heat generation Complement to PBSS306NX.1.Base2.CollectorC3.EmitterBE Absolute