PBSS3515E Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS3515E

Código: 1R

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT416 SC75

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PBSS3515E datasheet

 ..1. Size:113K  nxp
pbss3515e.pdf pdf_icon

PBSS3515E

PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 02 27 April 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS2515E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

 6.1. Size:64K  philips
pbss3515f 1.pdf pdf_icon

PBSS3515E

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3515F PNP transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification PNP transistor PBSS3515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (Automotive, Telecom and Audio Video) such as

 6.2. Size:142K  philips
pbss3515m.pdf pdf_icon

PBSS3515E

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS3515M PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili

 6.3. Size:547K  nxp
pbss3515mb.pdf pdf_icon

PBSS3515E

PBSS3515MB 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement PBSS2515MB. 1.2 Features and benefits Leadless ultra small SMD plastic High ef

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