PBSS3515E Datasheet. Specs and Replacement
Type Designator: PBSS3515E 📄📄
SMD Transistor Code: 1R
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 200
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PBSS3515E datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 15 V, 0.5 A PBSS3515M PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili... See More ⇒
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Detailed specifications: PBSS305NZ, PBSS305PD, PBSS305PX, PBSS305PZ, PBSS306NX, PBSS306NZ, PBSS306PX, PBSS306PZ, BD136, PBSS3515M, PBSS3515VS, PBSS3540E, PBSS3540M, PBSS4021NT, PBSS4021PT, PBSS4032ND, PBSS4032NT
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