All Transistors. PBSS3515E Datasheet

 

PBSS3515E Datasheet and Replacement


   Type Designator: PBSS3515E
   SMD Transistor Code: 1R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT416 SC75
      - BJT Cross-Reference Search

   

PBSS3515E Datasheet (PDF)

 ..1. Size:113K  nxp
pbss3515e.pdf pdf_icon

PBSS3515E

PBSS3515E15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 02 27 April 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra smallSOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS2515E.1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

 6.1. Size:64K  philips
pbss3515f 1.pdf pdf_icon

PBSS3515E

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS3515FPNP transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationPNP transistor PBSS3515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (Automotive,Telecom and Audio Video) such as

 6.2. Size:142K  philips
pbss3515m.pdf pdf_icon

PBSS3515E

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS3515M15 V, 0.5 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Jul 22NXP Semiconductors Product data sheet15 V, 0.5 A PBSS3515MPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

 6.3. Size:547K  nxp
pbss3515mb.pdf pdf_icon

PBSS3515E

PBSS3515MB15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 1 6 March 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB.1.2 Features and benefits Leadless ultra small SMD plastic High ef

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MHQ2484HX | BFQ233A | BC807-16LT1G | UN211D | ZT2477 | KST63 | 2SB1194

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