PBSS4021PT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4021PT

Código: *BJ

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 155 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT23

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PBSS4021PT datasheet

 ..1. Size:176K  philips
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PBSS4021PT

PBSS4021PT 20 V, 3.5 A PNP low VCEsat (BISS) transistor Rev. 01 29 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High col

 ..2. Size:293K  nxp
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PBSS4021PT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:187K  philips
 pbss4021pz.pdf pdf_icon

PBSS4021PT

PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V

 5.2. Size:195K  philips
 pbss4021px.pdf pdf_icon

PBSS4021PT

PBSS4021PX 20 V, 6.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NX. 1.2 Features and benefits Very low collector-emitter saturati

MOSTRAR MÁS

Otros transistores... PBSS306PX, PBSS306PZ, PBSS3515E, PBSS3515M, PBSS3515VS, PBSS3540E, PBSS3540M, PBSS4021NT, BDT88, PBSS4032ND, PBSS4032NT, PBSS4032PD, PBSS4032PT, PBSS4041NT, PBSS4041PT, PBSS4120T, PBSS4130T