Биполярный транзистор PBSS4021PT - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4021PT
Маркировка: *BJ
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 155 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT23
Аналоги (замена) для PBSS4021PT
PBSS4021PT Datasheet (PDF)
pbss4021pt.pdf
PBSS4021PT20 V, 3.5 A PNP low VCEsat (BISS) transistorRev. 01 29 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col
pbss4021pt.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4021pz.pdf
PBSS4021PZ20 V, 6.6 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V
pbss4021px.pdf
PBSS4021PX20 V, 6.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NX.1.2 Features and benefits Very low collector-emitter saturati
pbss4021pz.pdf
PBSS4021PZ20 V, 6.6 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V
pbss4021px.pdf
PBSS4021PX20 V, 6.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4021NX.1.2 Features and benefits Very low collector-emitter saturati
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