PBSS4021PT Datasheet. Specs and Replacement
Type Designator: PBSS4021PT 📄📄
SMD Transistor Code: *BJ
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 155 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT23
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PBSS4021PT datasheet
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V... See More ⇒
PBSS4021PX 20 V, 6.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4021NX. 1.2 Features and benefits Very low collector-emitter saturati... See More ⇒
Detailed specifications: PBSS306PX, PBSS306PZ, PBSS3515E, PBSS3515M, PBSS3515VS, PBSS3540E, PBSS3540M, PBSS4021NT, BDT88, PBSS4032ND, PBSS4032NT, PBSS4032PD, PBSS4032PT, PBSS4041NT, PBSS4041PT, PBSS4120T, PBSS4130T
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