PBSS4032ND Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4032ND  📄📄 

Código: ZF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 135 MHz

Capacitancia de salida (Cc): 44 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT457 SC74

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PBSS4032ND datasheet

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PBSS4032ND

PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PD. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

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PBSS4032ND

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:182K  philips
pbss4032nt.pdf pdf_icon

PBSS4032ND

PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

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pbss4032nz.pdf pdf_icon

PBSS4032ND

PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4032PZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

Otros transistores... PBSS306PZ, PBSS3515E, PBSS3515M, PBSS3515VS, PBSS3540E, PBSS3540M, PBSS4021NT, PBSS4021PT, BD222, PBSS4032NT, PBSS4032PD, PBSS4032PT, PBSS4041NT, PBSS4041PT, PBSS4120T, PBSS4130T, PBSS4140DPN