PBSS4160V Todos los transistores

 

PBSS4160V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4160V
   Código: 41
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: SOT666
 

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PBSS4160V Datasheet (PDF)

 ..1. Size:149K  nxp
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PBSS4160V

PBSS4160V60 V, 1 A NPN low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionLow VCEsat (BISS) NPN transistor in a SOT666 plastic package.PNP complement: PBSS5160V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Re

 6.1. Size:207K  philips
pbss4160ds.pdf pdf_icon

PBSS4160V

PBSS4160DS60 V, 1 A NPN/NPN low VCEsat (BISS) transistorRev. 04 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.PNP/PNP complement: PBSS5160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High

 6.2. Size:341K  philips
pbss4160t.pdf pdf_icon

PBSS4160V

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS4160T60 V, 1 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 May 12Supersedes data of 2003 Jun 24 NXP Semiconductors Product data sheet60 V, 1 A PBSS4160TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

 6.3. Size:258K  philips
pbss4160dpn.pdf pdf_icon

PBSS4160V

PBSS4160DPN60 V, 1 A NPN/PNP low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC

Otros transistores... PBSS4140DPN , PBSS4140T , PBSS4140U , PBSS4140V , PBSS4160DPN , PBSS4160DS , PBSS4160T , PBSS4160U , BD140 , PBSS4220V , PBSS4230T , PBSS4240DPN , PBSS4240T , PBSS4240V , PBSS4240Y , PBSS4250X , PBSS4320T .

History: 2SC1050

 

 
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