PBSS4160V datasheet, аналоги, основные параметры
Наименование производителя: PBSS4160V 📄📄
Маркировка: 41
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hFE): 250
Корпус транзистора: SOT666
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Аналоги (замена) для PBSS4160V
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PBSS4160V даташит
..1. Size:149K nxp
pbss4160v.pdf 
PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement PBSS5160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Re
6.1. Size:207K philips
pbss4160ds.pdf 
PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 04 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement PBSS5160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High
6.3. Size:258K philips
pbss4160dpn.pdf 
PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC
6.4. Size:324K nxp
pbss4160ds.pdf 
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.5. Size:258K nxp
pbss4160qa.pdf 
PBSS4160QA 60 V, 1 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5160QA. 2. Features and benefits Very low collector-emitter
6.6. Size:192K nxp
pbss4160u.pdf 
PBSS4160U 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package. PNP complement PBSS5160U. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current c
6.7. Size:280K nxp
pbss4160pans.pdf 
PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement PBSS4160PANPS. PNP/PNP complement PBSS5160PAPS. 2.
6.8. Size:359K nxp
pbss4160panp.pdf 
PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4160PAN. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto
6.9. Size:327K nxp
pbss4160panps.pdf 
PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4160PANS. PNP/PNP complement PBSS5160PAPS. 2.
6.10. Size:567K nxp
pbss4160t.pdf 
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.11. Size:375K nxp
pbss4160dpn.pdf 
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.12. Size:268K nxp
pbss4160pan.pdf 
PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 14 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. PNP/PNP complement PBSS5160PAP. 2. Features and benefits Very low collecto
6.13. Size:215K nxp
pbss4160x.pdf 
PBSS4160X 60 V, 1 A NPN low VCEsat BISS transistor 23 May 2017 Product data sheet 1. General description NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High
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