PBSS5240Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEETfpageMBD128PBSS5240Y40 V low VCEsat PNP transistorProduct data sheet 2002 Feb 28Supersedes data of 2001 Oct 24NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5240YFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit

DISCRETE SEMICONDUCTORS DATA SHEETPBSS5240T40 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 15Supersedes data of 2001 Oct 31NXP Semiconductors Product data sheet40 V, 2 A PBSS5240TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO c

PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor19 October 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power andflat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:PBSS4240X.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5240Z40 V, 2 A PNP low VCEsat (BISS) transistor15 October 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4240Z2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi

SMD Type TransistorsPNP TransistorsPBSS5240V (KBSS5240V) SOT523-6(SOT666) Features4 Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM53 High collector current gain (hFE) at high IC6 2 High efficiency leading to reduced heat generation1.collector2.collector Reduced printed-circuit board area requireme