PBSS5630PA Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5630PA
Código: AB
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hfe): 230
Paquete / Cubierta: SOT1061
Búsqueda de reemplazo de PBSS5630PA
PBSS5630PA PDF detailed specifications
pbss5630pa.pdf
PBSS5630PA 30 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 19 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4630PA. 1.2 Features and benefits... See More ⇒
pbss5630pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
pbss5612pa.pdf
PBSS5612PA 12 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4612PA. 1.2 Features and benefits ... See More ⇒
pbss5620pa.pdf
PBSS5620PA 20 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4620PA. 1.2 Features and benefits... See More ⇒
Otros transistores... PBSS5480X , PBSS5520X , PBSS5540X , PBSS5540Z , PBSS5560PA , PBSS5580PA , PBSS5612PA , PBSS5620PA , 2SC2383 , PBSS8110D , PBSS8110T , PBSS8110X , PBSS8110Y , PBSS8110Z , PBSS8510PA , PBSS9110D , PBSS9110T .
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