PBSS5630PA Datasheet. Specs and Replacement
Type Designator: PBSS5630PA 📄📄
SMD Transistor Code: AB
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Package: SOT1061
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PBSS5630PA datasheet
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
PBSS5612PA 12 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4612PA. 1.2 Features and benefits ... See More ⇒
PBSS5620PA 20 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4620PA. 1.2 Features and benefits... See More ⇒
Detailed specifications: PBSS5480X, PBSS5520X, PBSS5540X, PBSS5540Z, PBSS5560PA, PBSS5580PA, PBSS5612PA, PBSS5620PA, 2SC2383, PBSS8110D, PBSS8110T, PBSS8110X, PBSS8110Y, PBSS8110Z, PBSS8510PA, PBSS9110D, PBSS9110T
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