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PBSS5630PA PDF Specs and Replacement


   Type Designator: PBSS5630PA
   SMD Transistor Code: AB
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: SOT1061
 

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PBSS5630PA PDF detailed specifications

 ..1. Size:350K  philips
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PBSS5630PA

PBSS5630PA 30 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 19 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4630PA. 1.2 Features and benefits... See More ⇒

 ..2. Size:470K  nxp
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PBSS5630PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 8.1. Size:154K  philips
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PBSS5630PA

PBSS5612PA 12 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4612PA. 1.2 Features and benefits ... See More ⇒

 8.2. Size:168K  philips
pbss5620pa.pdf pdf_icon

PBSS5630PA

PBSS5620PA 20 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4620PA. 1.2 Features and benefits... See More ⇒

Detailed specifications: PBSS5480X , PBSS5520X , PBSS5540X , PBSS5540Z , PBSS5560PA , PBSS5580PA , PBSS5612PA , PBSS5620PA , 2SC2383 , PBSS8110D , PBSS8110T , PBSS8110X , PBSS8110Y , PBSS8110Z , PBSS8510PA , PBSS9110D , PBSS9110T .

History: PBSS8110D

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