PBSS8110T Todos los transistores

 

PBSS8110T Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS8110T
   Código: *U8
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 7.5 pF
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT23
 

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PBSS8110T PDF detailed specifications

 ..1. Size:123K  nxp
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PBSS8110T

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag... See More ⇒

 6.1. Size:150K  nxp
pbss8110d.pdf pdf_icon

PBSS8110T

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3 ... See More ⇒

 6.2. Size:135K  nxp
pbss8110x.pdf pdf_icon

PBSS8110T

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili... See More ⇒

 6.3. Size:163K  nxp
pbss8110y.pdf pdf_icon

PBSS8110T

PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation 1.3 Applicati... See More ⇒

Otros transistores... PBSS5540X , PBSS5540Z , PBSS5560PA , PBSS5580PA , PBSS5612PA , PBSS5620PA , PBSS5630PA , PBSS8110D , TIP142 , PBSS8110X , PBSS8110Y , PBSS8110Z , PBSS8510PA , PBSS9110D , PBSS9110T , PBSS9110X , PBSS9110Y .

 

 
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