PBSS8110T Datasheet, Equivalent, Cross Reference Search
Type Designator: PBSS8110T
SMD Transistor Code: *U8
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 7.5 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: SOT23
PBSS8110T Transistor Equivalent Substitute - Cross-Reference Search
PBSS8110T Datasheet (PDF)
pbss8110t.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS8110T100 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Dec 22Supersedes data of 2003 Jul 28Philips Semiconductors Product specification100 V, 1 APBSS8110TNPN low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT SOT23 packageVCEO collector-emitter voltag
pbss8110d.pdf
PBSS8110D100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a plastic SOT457 (SC-74) package.1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation1.3
pbss8110x.pdf
PBSS8110X100 V, 1 A NPN low VCEsat (BISS) transistorRev. 01 11 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.PNP complement: PBSS9110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili
pbss8110y.pdf
PBSS8110Y100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 21 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a SOT363 (SC-88) plastic package.1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation1.3 Applicati
pbss8110z.pdf
PBSS8110Z100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 8 January 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS9110Z.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curre
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TRR100-12 | DNBT8105 | BSP62T1 | 2SB1131T | KTC1027 | 2SA1175 | NSS60200LT1G
History: TRR100-12 | DNBT8105 | BSP62T1 | 2SB1131T | KTC1027 | 2SA1175 | NSS60200LT1G
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