PBSS9110Y
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS9110Y
Código: 91*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.29
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 17
pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
SOT363
Búsqueda de reemplazo de transistor bipolar PBSS9110Y
PBSS9110Y
Datasheet (PDF)
..1. Size:153K nxp
pbss9110y.pdf 
PBSS9110Y100 V, 1 A PNP low VCEsat (BISS) transistorRev. 02 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat transistor in a SOT363 (SC-88) plastic package.1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation1.3 A
6.1. Size:180K philips
pbss9110t.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS9110T100 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 May 13Supersedes data of 2004 May 06NXP Semiconductors Product data sheet100 V, 1 A PBSS9110TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT23 packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturatio
6.2. Size:184K nxp
pbss9110x.pdf
PBSS9110X100 V, 1 A PNP low VCEsat (BISS) transistorRev. 02 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.NPN complement: PBSS8110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current ca
6.3. Size:188K nxp
pbss9110z.pdf
PBSS9110Z100 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS8110Z.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu
6.4. Size:166K nxp
pbss9110d.pdf
PBSS9110D100 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS8110D.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu
6.5. Size:395K nxp
pbss9110t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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