PBSS9110Y Todos los transistores

 

PBSS9110Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS9110Y
   Código: 91*
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.29 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 17 pF
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT363
 

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PBSS9110Y Datasheet (PDF)

 ..1. Size:153K  nxp
pbss9110y.pdf pdf_icon

PBSS9110Y

PBSS9110Y100 V, 1 A PNP low VCEsat (BISS) transistorRev. 02 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat transistor in a SOT363 (SC-88) plastic package.1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation1.3 A

 6.1. Size:180K  philips
pbss9110t.pdf pdf_icon

PBSS9110Y

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS9110T100 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 May 13Supersedes data of 2004 May 06NXP Semiconductors Product data sheet100 V, 1 A PBSS9110TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT23 packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturatio

 6.2. Size:184K  nxp
pbss9110x.pdf pdf_icon

PBSS9110Y

PBSS9110X100 V, 1 A PNP low VCEsat (BISS) transistorRev. 02 22 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.NPN complement: PBSS8110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current ca

 6.3. Size:188K  nxp
pbss9110z.pdf pdf_icon

PBSS9110Y

PBSS9110Z100 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 11 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS8110Z.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

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History: TP3392

 

 
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