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PDTA123EM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTA123EM
   Código: F7
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT883

 Búsqueda de reemplazo de transistor bipolar PDTA123EM

 

PDTA123EM Datasheet (PDF)

 ..1. Size:416K  nxp
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf

PDTA123EM
PDTA123EM

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:56K  motorola
pdta123et 3.pdf

PDTA123EM
PDTA123EM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns

 6.2. Size:183K  philips
pdta123e series.pdf

PDTA123EM
PDTA123EM

DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.3. Size:56K  philips
pdta123et 3.pdf

PDTA123EM
PDTA123EM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns

 6.4. Size:139K  nxp
pdta123eef pdta123ek pdta123es.pdf

PDTA123EM
PDTA123EM

DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

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