PDTA123EM Datasheet, Equivalent, Cross Reference Search
Type Designator: PDTA123EM
SMD Transistor Code: F7
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT883
PDTA123EM Transistor Equivalent Substitute - Cross-Reference Search
PDTA123EM Datasheet (PDF)
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pdta123et 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns
pdta123e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
pdta123et 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns
pdta123eef pdta123ek pdta123es.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
