PDTB113ZT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTB113ZT  📄📄 

Código: *7W_-7W_p7W_t7W_W7W

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 11 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SOT23

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PDTB113ZT datasheet

 6.1. Size:118K  nxp
 pdtb113z.pdf pdf_icon

PDTB113ZT

PDTB113Z series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTB113ZK SOT346 SC-59A TO-236 PDTD113ZK PDTB113ZS[1] SOT54 SC-43A TO-92 PD

 7.1. Size:118K  nxp
 pdtb113e.pdf pdf_icon

PDTB113ZT

PDTB113E series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTB113EK SOT346 SC-59A TO-236 PDTD113EK PDTB113ES[1] SOT54 SC-43A TO-92 PDT

 8.1. Size:26K  motorola
 pdtb114et p09 sot23.pdf pdf_icon

PDTB113ZT

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi

 8.2. Size:49K  motorola
 pdtb114et 4.pdf pdf_icon

PDTB113ZT

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi

MOSTRAR MÁS

Otros transistores... PDTA144VM, PDTA144VT, PDTA144VU, PDTA144WE, PDTA144WM, PDTA144WT, PDTA144WU, PDTB113ET, TIP142, PDTB123ET, PDTB123TT, PDTB123YT, PDTC114EE, PDTC114EM, PDTC114ET, PDTC114EU, PDTC114TE