All Transistors. PDTB113ZT Datasheet

 

PDTB113ZT Datasheet and Replacement


   Type Designator: PDTB113ZT
   SMD Transistor Code: *7W_-7W_p7W_t7W_W7W
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 11 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT23
 

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PDTB113ZT Datasheet (PDF)

 6.1. Size:118K  nxp
 pdtb113z.pdf pdf_icon

PDTB113ZT

PDTB113Z seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 10 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB113ZK SOT346 SC-59A TO-236 PDTD113ZKPDTB113ZS[1] SOT54 SC-43A TO-92 PD

 7.1. Size:118K  nxp
 pdtb113e.pdf pdf_icon

PDTB113ZT

PDTB113E seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB113EK SOT346 SC-59A TO-236 PDTD113EKPDTB113ES[1] SOT54 SC-43A TO-92 PDT

 8.1. Size:26K  motorola
 pdtb114et p09 sot23.pdf pdf_icon

PDTB113ZT

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi

 8.2. Size:49K  motorola
 pdtb114et 4.pdf pdf_icon

PDTB113ZT

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1825 | TP5401 | KSD5005 | KC856W | MJE5741 | NB211YJ | STTIP32C

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