PDTC114ET Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTC114ET 📄📄
Código: p16_t16_W16
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: SOT23
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PDTC114ET datasheet
6.1. Size:58K motorola
pdtc114eu 4.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design
6.3. Size:57K motorola
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe
6.4. Size:57K motorola
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number
6.5. Size:55K motorola
pdtc114eef 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1
6.6. Size:58K philips
pdtc114eu 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design
6.7. Size:174K philips
pdtc114e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Product data sheet 2004 Aug 05 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PDTC114E series R1 = 10 k , R2 = 10 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
6.9. Size:57K philips
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe
6.10. Size:57K philips
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplification of circuit design 3 Reduces number
6.11. Size:55K philips
pdtc114eef 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k each) 3 R1
Otros transistores... PDTA144WU, PDTB113ET, PDTB113ZT, PDTB123ET, PDTB123TT, PDTB123YT, PDTC114EE, PDTC114EM, TIP32C, PDTC114EU, PDTC114TE, PDTC114TM, PDTC114TT, PDTC114TU, PDTC114YE, PDTC114YM, PDTC114YT
