PDTC114ET Datasheet. Specs and Replacement

Type Designator: PDTC114ET  📄📄 

SMD Transistor Code: p16_t16_W16

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT23

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PDTC114ET datasheet

 ..1. Size:56K  motorola

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PDTC114ET

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 ..2. Size:56K  philips

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PDTC114ET

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 6.1. Size:58K  motorola

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PDTC114ET

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design ... See More ⇒

 6.2. Size:56K  motorola

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PDTC114ET

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Detailed specifications: PDTA144WU, PDTB113ET, PDTB113ZT, PDTB123ET, PDTB123TT, PDTB123YT, PDTC114EE, PDTC114EM, TIP32C, PDTC114EU, PDTC114TE, PDTC114TM, PDTC114TT, PDTC114TU, PDTC114YE, PDTC114YM, PDTC114YT

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