All Transistors. PDTC114ET Datasheet

 

PDTC114ET Datasheet and Replacement


   Type Designator: PDTC114ET
   SMD Transistor Code: p16_t16_W16
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT23
 

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PDTC114ET Datasheet (PDF)

 ..1. Size:56K  motorola
 pdtc114et 7.pdf pdf_icon

PDTC114ET

DISCRETE SEMICONDUCTORSDATA SHEEThalfpageM3D088PDTC114ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3dbook, 4 columns3 Simplification of circuit designR1

 ..2. Size:56K  philips
 pdtc114et 7.pdf pdf_icon

PDTC114ET

DISCRETE SEMICONDUCTORSDATA SHEEThalfpageM3D088PDTC114ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3dbook, 4 columns3 Simplification of circuit designR1

 6.1. Size:58K  motorola
 pdtc114eu 4.pdf pdf_icon

PDTC114ET

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

 6.2. Size:56K  motorola
 pdtc114ee 4.pdf pdf_icon

PDTC114ET

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

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Datasheet: PDTA144WU , PDTB113ET , PDTB113ZT , PDTB123ET , PDTB123TT , PDTB123YT , PDTC114EE , PDTC114EM , 2SC1740 , PDTC114EU , PDTC114TE , PDTC114TM , PDTC114TT , PDTC114TU , PDTC114YE , PDTC114YM , PDTC114YT .

History: 2SB76 | ASZ23 | ASY61 | DTA115TCA | NB021EY | 2SD2036 | 3DD128F_H6D

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