PDTC114YM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PDTC114YM
   Código: DU
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT883

Búsqueda de reemplazo de transistor bipolar PDTC114YM

PDTC114YM Datasheet (PDF)

6.1. Size:56K motorola
pdtc114yt 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re

6.2. Size:59K motorola
pdtc114yu 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R

6.3. Size:56K motorola
pdtc114ye 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

6.4. Size:174K philips
pdtc114y series.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPDTC114Y seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Sep 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC114Y seriesR1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

6.5. Size:56K philips
pdtc114yt 3.pdf