Справочник транзисторов. PDTC114YM

 

Биполярный транзистор PDTC114YM - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PDTC114YM
   Маркировка: DU
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.21
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 2.5 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT883

 Аналоги (замена) для PDTC114YM

 

 

PDTC114YM Datasheet (PDF)

 6.1. Size:56K  motorola
pdtc114yt 3.pdf

PDTC114YM
PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re

 6.2. Size:59K  motorola
pdtc114yu 1.pdf

PDTC114YM
PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R

 6.3. Size:56K  motorola
pdtc114ye 3.pdf

PDTC114YM
PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

 6.4. Size:174K  philips
pdtc114y series.pdf

PDTC114YM
PDTC114YM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC114Y seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Sep 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC114Y seriesR1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.5. Size:56K  philips
pdtc114yt 3.pdf

PDTC114YM
PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re

 6.6. Size:59K  philips
pdtc114yu 1.pdf

PDTC114YM
PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R

 6.7. Size:56K  philips
pdtc114ye 3.pdf

PDTC114YM
PDTC114YM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

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